S70GL01GN00 Datasheet, PDF (14/83 Pages) SPANSION – 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology

Advance Information
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This
is one of two functions provided by the WP#/ACC pin. This function is primarily
intended to allow faster manufacturing throughput at the factory.
If the system asserts V_HH on this pin, the device automatically enters the afore-
mentioned Unlock Bypass mode, temporarily unprotects any protected sector
groups, and uses the higher voltage on the pin to reduce the time required for
program operations. The system would use a two-cycle program command se-
quence as required by the Unlock Bypass mode. Removing V_HH from the WP#/
ACC pin returns the device to normal operation. Note that the WP#/ACC pin must
not be at V_HH for operations other than accelerated programming, or device dam-
age may result. WP# contains an internal pullup; when unconnected, WP# is at
V_IH.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the au-
toselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ7–DQ0. Standard read
cycle timings apply in this mode. Refer to the Autoselect Mode‚ on page 28 and
Autoselect Command Sequence‚ on page 40, for more information.
Standby Mode
When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.
The device enters the CMOS standby mode when the CE# or CE2# and RESET#
pins are both held at V_IO ± 0.3 V. (Note that this is a more restricted voltage
range than V_IH.) If CE# or CE2# and RESET# are held at V_IH, but not within V_IO
± 0.3 V, the device is in the standby mode, but the standby current is greater.
The device requires standard access time (t_CE) for read access when the device
is in either of these standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws ac-
tive current until the operation is completed.
Refer to DC Characteristics‚ on page 67 for the standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The de-
vice automatically enables this mode when addresses remain stable for t_ACC +
30 ns. The automatic sleep mode is independent of the CE# or CE2#, WE#, and
OE# control signals. Standard address access timings provide new data when ad-
dresses are changed. While in sleep mode, output data is latched and always
available to the system. Refer to DC Characteristics‚ on page 67 for the
automatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading
array data. When the RESET# pin is driven low for at least a period of t_RP, the
device immediately terminates any operation in progress, tristates all output
pins, and ignores all read/write commands for the duration of the RESET# pulse.
The device also resets the internal state machine to reading array data. The op-
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S70GL01GN00 MirrorBit^TM Flash
S70GL01GN00_00_A1 June 1, 2005