S70GL01GN00 Datasheet, PDF (60/83 Pages) SPANSION – 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology

Advance Information
Table 11. Command Definitions for Each S29GL512N, x8 (Sheet 2 of 2)
Bus Cycles (Notes 2, 3, 4, and 5)
Command (Notes)
First
Second
Third
Fourth
Fifth
Sixth
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Password Protection Command Set Entry 3 AAA AA 555 55 AAA 60
Password Program (20)
2 XXX
A0
PWA PWD
x
x
Password Read (19)
8
00
06
PWD
0
PWD
6
01
07
PWD
1
PWD
7
02
PWD
2
03
PWD
3
04
PWD
4
05
PWD
5
Password Unlock (19)
00
25
00
03
00
PWD
0
01
PWD
1
02
PWD
2
03
PWD
3
11
04
PWD
4
05
PWD
5
06
PWD
6
07
PWD
7
00
29
Password Protection Command Set Exit
(18, 23)
2 XXX 90 XXX 00
Non-Volatile Sector Protection Command Set Definitions
Nonvolatile Sector Protection Command
Set Entry
3 AAA AA
55
55 AAA C0
PPB Program (24, 25)
2 XXX A0 SA 00
All PPB Erase
2 XXX 80 00 30
PPB Status Read (25)
1 SA
RD
(0)
Non-Volatile Sector Protection Command
Set Exit (18)
2
XXX
90
XXX
00
Global Non-Volatile Sector Protection Freeze Command Set Definitions
Global Non-Volatile Sector Protection
Freeze Command Set Entry
3 AAA AA 555 55 AAA 50
PPB Lock Bit Set (25)
2 XXX A0 XXX 00
PPB Lock Status Read (25)
1 XXX
RD
(0)
Global Non-Volatile Sector Protection
Freeze Command Set Exit (18)
2 XXX 90 XXX 00
Volatile Sector Protection Command Set Definitions
Volatile Sector Protection Command Set
Entry
3 AAA AA 555
55 AAA E0
DYB Set (24, 25)
2 XXX A0 SA 00
DYB Clear (25)
2 XXX A0 SA 01
DYB Status Read (25)
1 SA
RD
(0)
Volatile Sector Protection Command Set
Exit (18)
2 XXX
90 XXX 00
Legend:
X = Don’t care
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# (or CE2#) pulse,
whichever happens later.
58
S70GL01GN00 MirrorBit^TM Flash
S70GL01GN00_00_A1 June 1, 2005