K4F661612E Datasheet, PDF(34/35 Page) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

K4F661612E Datasheet, PDF (34/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

◁

Industrial Temperature

K4F661612E, K4F641612E

CAS - BEFORE - RAS SELF REFRESH CYCLE

NOTE : OE , A = Donâ²t care

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

tRP

tRPC

tC P

tCSR

tC P

tCSR

tRASS

DQ0 ~ DQ7

tOFF

VO H -

VOL -

DQ8 ~ DQ15

VOH -

VOL -

VIH -

VIL -

tWRP

tWRH

OPEN

TEST MODE IN CYCLE

NOTE : OE , A = Donâ²t care

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

tR P

tCRP

tCP

tCSR

tCP

tCSR

tRC

tRAS

tCHR

VIH -

VIL -

DQ0 ~ DQ15

VOH -

VOL -

tOFF

tWTS

tWTH

OPEN

CMOS DRAM

tRPS

tR P C

tC H S

tRP

tRPC

Donâ²t care

Undefined

▷