K4F661612E Datasheet, PDF(31/35 Page) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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K4F661612E Datasheet, PDF (31/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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Industrial Temperature

K4F661612E, K4F641612E

RAS - ONLY REFRESH CYCLE

NOTE : W, OE , DIN = Donâ²t care

DOUT = OPEN

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

VIL -

tCRP

tASR tRAH

ROW

ADDR

tRC

tRAS

CAS - BEFORE - RAS REFRESH CYCLE

NOTE : OE , A = Donâ²t care

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

DQ0 ~ DQ7

VOH -

VOL -

DQ8 ~ DQ15

VOH -

VOL -

VIH -

VIL -

tRP

tC R P

tC P

tCSR

tC P

tCSR

tOFF

tC H R

tWRP

tWRH

tRC

tRAS

OPEN

CMOS DRAM

tRP

tRPC

tR P

tRPC

Donâ²t care

Undefined

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