K4F661612E Datasheet, PDF(32/35 Page) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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K4F661612E Datasheet, PDF (32/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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Industrial Temperature

K4F661612E, K4F641612E

HIDDEN REFRESH CYCLE ( READ )

CMOS DRAM

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

VIL -

VIH -

VIL -

VIH -

VIL -

DQ0 ~ DQ7

VOH -

VOL -

DQ8 ~ DQ15

VOH -

VOL -

tC R P

tRC

tRAS

tRC

tRP

tRAS

tRCD

tRSH

tCHR

tCRP

tRCD

tRSH

tR A D

tASR

tRAH

tASC

ROW

ADDRESS

tRAL

tCAH

COLUMN

ADDRESS

tR C S

tC H R

tW R H

tA A

tO E A

OPEN

tCLZ

tR A C

tCAC

tOEZ

DATA-OUT

tO F F

OPEN

DATAD-IANTA-OUT

Donâ²t care

Undefined

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