K4F661612E Datasheet, PDF (33/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

Industrial Temperature
K4F661612E, K4F641612E
HIDDEN REFRESH CYCLE ( WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tC R P
tRC
tRAS
tR P
tRC
tR P
tRAS
tRCD
tRSH
tCHR
tC R P
tRCD
tRSH
tRAD
tASR
tRAH tASC
ROW
ADDRESS
tR A L
tCAH
COLUMN
ADDRESS
tWCS
tWCH
tWP
tCHR
tWRP
tW R H
tDS
tDH
DATA-IN
tD S
tDH
DATA-IN
Don′t care
Undefined