K4F661612E Datasheet, PDF (23/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

Industrial Temperature
K4F661612E, K4F641612E
FAST PAGE MODE LOWER BYTE READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VO H -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tR A S P
tR P
tCRP
¡ó
tR H C P
tRPC
tC R P
tCSH
tRCD
tPC
tCP
tCAS
tPC
tCP
tCAS
tRAL
tPC
tC P
tCAS
tCAS
tASR
tR A D
tRAH tASC tCAH
ROW
ADDR
COLUMN
ADDRESS
tASC tCAH
COLUMN
ADDRESS
tASC tCAH
COLUMN
ADDR
tASC tCAH
COLUMN
ADDRESS
tRCS
tRCH
tR C S
tRCH
tRCS
tRCH
tRCS
tRPC
tR C H
tRRH
tAA
tO E A
tC A C
tAA
tC P A
tOEA
tA A
tC P A
tOEA
tC A C
tA A
tC P A
tOEA
tCAC
tCAC
tRAC
tCLZ
tOFF
tOEZ
VALID
DATA-OUT
tO F F
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
OPEN
Don′t care
Undefined