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| K4F661612E Datasheet, PDF (15/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode | |||
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Industrial Temperature
K4F661612E, K4F641612E
UPPER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tCRP
tCRP
tRC
tRAS
tRCD
tCSH
tRSH
tC A S
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tRAL
tWCS
tWCH
tWP
tDS
tD H
DATA-IN
CMOS DRAM
tR P
tCRP
tRPC
Donâ²t care
Undefined
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