K4F661612E Datasheet, PDF(12/35 Page) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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K4F661612E Datasheet, PDF (12/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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Industrial Temperature

K4F661612E, K4F641612E

UPPER BYTE READ CYCLE

NOTE : DIN = OPEN

CMOS DRAM

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

VIL -

VIH -

VIL -

VIH -

VIL -

DQ0 ~ DQ7

VOH -

VOL -

DQ8 ~ DQ15

VOH -

VOL -

tRC

tRAS

tC R P

tRCD

tCSH

tRSH

tCAS

tRAD

tASR

tRAH

ROW

ADDRESS

tASC

tCAH

COLUMN

ADDRESS

tRAL

tRCS

tAA

tO E A

tRP

tCRP

tR P C

tRRH

tRCH

tOFF

tOEZ

OPEN

tRAC

OPEN

tC A C

tCLZ

DATA-OUT

Donâ²t care

Undefined

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