K4F661612E Datasheet, PDF (21/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

Industrial Temperature
K4F661612E, K4F641612E
UPPER-BYTE READ - MODIFY - WRITE CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VI/OH -
VI/OL -
DQ8 ~ DQ15
VI/OH -
VI/OL -
tRWC
tRAS
tR P
tCRP
tRCD
tCRP
tRSH
tCAS
tRAD
tASR tRAH
ROW
ADDR
tASC tCAH
COLUMN
ADDRESS
tC S H
tAWD
tCWD
tR W D
tOEA
tRPC
tR W L
tCWL
tWP
OPEN
tCLZ
tCAC
tAA
tRAC
tOED
tOEZ
VALID
DATA-OUT
tDS tDH
VALID
DATA-IN
Don′t care
Undefined