K4F661612E Datasheet, PDF(20/35 Page) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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K4F661612E Datasheet, PDF (20/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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Industrial Temperature

K4F661612E, K4F641612E

LOWER-BYTE READ - MODIFY - WRITE CYCLE

CMOS DRAM

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

VIL -

VIH -

VIL -

VIH -

VIL -

DQ0 ~ DQ7

VI/OH -

VI/OL -

DQ8 ~ DQ15

VI/OH -

VI/OL -

tCRP

tR A S

tRWC

tR P

tRPC

tC R P

tRCD

tRAD

tASR tRAH

ROW

ADDR

tASC tCAH

COLUMN

ADDRESS

tRSH

tCAS

tCSH

tAWD

tCWD

tRWD

tO E A

tRWL

tCWL

tWP

tCLZ

tCAC

tAA

tRAC

tOED

tO E Z

VALID

DATA-OUT

tD S tD H

VALID

DATA-IN

OPEN

Donâ²t care

Undefined

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