K4F661612E Datasheet, PDF (24/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

Industrial Temperature
K4F661612E, K4F641612E
FAST PAGE MODE UPPER BYTE READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
tCRP
tR A S P
tCSH
tRCD
tPC
tCP
tCAS
¡ó
tPC
tCP
tC A S
tPC
tCAS
tR H C P
tC P
tCAS
tR P
tRPC
VIH -
LCAS
VIL -
VIH -
A
VIL -
tCRP
tASR
tRAD
tRAH tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
tASC tCAH
COLUMN
ADDRESS
tRAL
tASC
tCAH tASC tCAH
COLUMN
ADDR
COLUMN
ADDRESS
tRPC
VIH -
W
VIL -
VIH -
OE
VIL -
tRCS
tRCH
tRCS
tRCH
tRCS
tR C H
tRCS
tR C H
tRRH
tAA
tO E A
tC A C
tAA
tCPA
tOEA
tC A C
tA A
tCPA
tOEA
tCAC
tA A
tC P A
tO E A
DQ0 ~ DQ7
VOH -
VOL -
OPEN
DQ8 ~ DQ15
VOH -
VOL -
tC A C
tRAC
tCLZ
tO F F
tOEZ
VALID
DATA-OUT
tO F F
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tOFF
tO E Z
VALID
DATA-OUT
Don′t care
Undefined