K4F661612E Datasheet, PDF (16/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

Industrial Temperature
K4F661612E, K4F641612E
WORD WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tR C
tRAS
tCRP
tR C D
tCRP
tRCD
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tCSH
tCSH
tRSH
tCAS
tRSH
tCAS
tCAH
COLUMN
ADDRESS
tRAL
tC W L
tRWL
tWP
tOED
tOEH
tDS
tDH
DATA-IN
tDS
tDH
DATA-IN
CMOS DRAM
tRP
tCRP
tCRP
Don′t care
Undefined