K4F661612E Datasheet, PDF (30/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

Industrial Temperature
K4F661612E, K4F641612E
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CMOS DRAM
VIH -
RAS
VIL -
tCSH
tRASP
tC R P
VIH -
UCAS
VIL -
tC R P
tR C D
tPRWC
tC P
tCAS
tRSH
tCAS
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
tASR
tRAD
tRAH
tASC
ROW
ADDR
COL.
ADDR
tRCS
tCAH
tCWD
tAWD
tRWD
tO E A
tCWL
tASC
tCAH
COL.
ADDR
tRCS
tWP
tRAL
tRWL
tCWL
tWP
tCWD
tAWD
tCPWD
tO E A
tRP
tCRP
tRPC
DQ0 ~ DQ7
VI/OH -
VI/OL -
OPEN
DQ8 ~ DQ15
VI/OH -
VI/OL -
tCAC
tOED
tA A
tRAC
tOEZ
tDH
tDS
tCAC
tOED
tA A
tOEZ
tDH
tD S
tCLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined