K4F661612E Datasheet, PDF (26/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

Industrial Temperature
K4F661612E, K4F641612E
FAST PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
tRASP
¡ó
tR H C P
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
tCRP
tCRP
tRCD
tPC
tC A S
tASR
tRAD
tRAH
tCSH
tASC
tC A H
ROW
ADDR
COLUMN
ADDRESS
¡ó
tPC
tCP
tCP
tCAS
tRSH
tCAS
¡ó
tRAL
tASC tCAH
tASC tCAH
¡ó
COLUMN
COLUMN
ADDRESS
ADDRESS
¡ó
VIH -
W
VIL -
tWCS tWCH
tWP
tWCS
tWCH
tWP
¡ó
tWCS
tW C H
tW P
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tDS tDH
VALID
DATA-IN
¡ó
¡ó
tDS
tDH
VALID
DATA-IN
tDS tDH
¡ó
VALID
DATA-IN
¡ó
tRP
tRPC
Don′t care
Undefined