K4F661612E Datasheet, PDF (28/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

Industrial Temperature
K4F661612E, K4F641612E
FAST PAGE MODE WORD READ-MODIFY-WRITE CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
tCSH
tC R P
tRCD
tPRWC
tCAS
tC R P
tRCD
tCAS
tASR
tRAD
tRAH
tASC
ROW
ADDR
COL.
ADDR
tRCS
tCAH
tC W L
tRASP
tR S H
tC P
tCAS
tC P
tCAS
tASC
COL.
ADDR
tCAH
tRCS
tRAL
tR W L
tC W L
tR P
tCRP
tCRP
VIH -
W
VIL -
tWP
tCWD
tAWD
tRWD
tW P
tCWD
tAWD
tCPWD
VIH -
OE
VIL -
DQ0 ~ DQ7
VI/OH -
VI/OL -
tOEA
tCAC
tAA
tRAC
tOED
tO E Z
tDH
tD S
tO E A
tCAC
tAA
tOED
tOEZ
tDH
tDS
tCLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
DQ8 ~ DQ15
VI/OH -
tCAC
tA A
tRAC
tOED
tOEZ
tDH
tD S
tCAC
tA A
tOED
tO E Z
tDH
tDS
VI/OL -
tCLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined