K4F661612E Datasheet, PDF (22/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

Industrial Temperature
K4F661612E, K4F641612E
FAST PAGE MODE WORD READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tRASP
tRP
tC R P
tCSH
tRCD
tPC
tC P
tC A S
¡ó
tPC
tC P
tCAS
tPC
tC A S
tRHCP
tC P
tC A S
tRPC
tC R P
tRCD
tC P
tC A S
tCAS
tRAL
tCP
tC P
tC A S
tC A S
tASR
tRAD
tRAH tASC
tCAH tASC
tCAH tASC
tCAH tASC tCAH
ROW
ADDR
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
ADDR
COLUMN
ADDRESS
tRCS
tRCH
tRCS
tRCH
tRCS
tRCH
tRCS
tR P C
tRCH
tRRH
tAA
tOEA
tCAC
tA A
tCPA
tO E A
tCAC
tAA
tCPA
tOEA
tCAC
tAA
tCPA
tOEA
tCAC
tRAC
tCLZ
tCAC
tRAC
tCLZ
tOFF
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tO F F
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tO F F
tOEZ
VALID
DATA-OUT
Don′t care
Undefined