K4F661612E Datasheet, PDF(10/35 Page) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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K4F661612E Datasheet, PDF (10/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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Industrial Temperature

K4F661612E, K4F641612E

WORD READ CYCLE

CMOS DRAM

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

VIL -

VIH -

VIL -

VIH -

VIL -

DQ0 ~ DQ7

VOH -

VOL -

DQ8 ~ DQ15

VOH -

VOL -

tRC

tRAS

tCRP

tRCD

tC S H

tCSH

tR S H

tCAS

tR S H

tCAS

tASR

tRAD

tRAH

tASC

ROW

ADDRESS

tCAH

COLUMN

ADDRESS

tRAL

tR C S

tR P

tCRP

tRRH

tRCH

OPEN

tA A

tR A C

tOEA

tCAC

tCLZ

tRAC

tCAC

tCLZ

tOEZ

DATA-OUT

tO E Z

DATA-OUT

tOFF

Donâ²t care

Undefined

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