K4F661612E Datasheet, PDF (25/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

Industrial Temperature
K4F661612E, K4F641612E
FAST PAGE MODE WORD WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
tRASP
¡ó
tRHCP
tCRP
tRCD
tPC
tCAS
tCRP
tRCD
tPC
tCAS
tASR
tRAD
tRAH
tCSH
tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
tPC
tC P
tCP
tCAS
tRSH
tCAS
¡ó
tPC
tC P
tC P
tCAS
tRSH
tCAS
¡ó
tASC tCAH
COLUMN
ADDRESS
tRAL
tASC tCAH
¡ó
COLUMN
ADDRESS
¡ó
VIH -
W
VIL -
tWCS tW C H
tWP
tWCS
tWCH
tW P
¡ó
tWCS tWCH
tWP
tRP
tC R P
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tDS tDH
VALID
DATA-IN
tDS tDH
VALID
DATA-IN
¡ó
¡ó
tD S tDH
VALID
DATA-IN
tDS tDH
¡ó
VALID
DATA-IN
¡ó
tD S tDH
VALID
DATA-IN
tDS tDH
¡ó
VALID
DATA-IN
¡ó
Don′t care
Undefined