K4F661612E Datasheet, PDF (29/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

Industrial Temperature
K4F661612E, K4F641612E
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CMOS DRAM
tRASP
tR P
VIH -
RAS
VIL -
tCSH
tCRP
tRPC
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
tCRP
tRCD
tRAD
tR A H
tASR
tASC
ROW
ADDR
COL.
ADDR
tRCS
VIH -
W
VIL -
tPRWC
tCP
tCAS
tRSH
tCAS
tCAH
tCWL
tCWD
tAWD
tRWD
tASC
COL.
ADDR
tCAH
tRCS
tR A L
tR W L
tC W L
tWP
tW P
tCWD
tA W D
tCPWD
tC R P
VIH -
OE
VIL -
DQ0 ~ DQ7
VI/OH -
tOEA
tOED
tC A C
tAA
tRAC
tOEZ
tD H
tD S
tOEA
tCAC
tOED
tA A
tOEZ
tDH
tDS
VI/OL -
tCLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
DQ8 ~ DQ15
VI/OH -
VI/OL -
OPEN
Don′t care
Undefined