K4F661612E Datasheet, PDF(11/35 Page) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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K4F661612E Datasheet, PDF (11/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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Industrial Temperature

K4F661612E, K4F641612E

LOWER BYTE READ CYCLE

NOTE : DIN = OPEN

CMOS DRAM

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

VIL -

VIH -

VIL -

VIH -

VIL -

DQ0 ~ DQ7

VOH -

VOL -

DQ8 ~ DQ15

VOH -

VOL -

tR C

tRAS

tRP

tCRP

tRPC

tCRP

tRCD

tASR

tRAD

tRAH

tASC

ROW

ADDRESS

tCSH

tRSH

tCAS

tC A H

COLUMN

ADDRESS

tRAL

tRCS

tR A C

OPEN

tA A

tOEA

tCAC

tCLZ

tRRH

tRCH

tOFF

tOEZ

DATA-OUT

OPEN

Donâ²t care

Undefined

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