S128 Datasheet, PDF (44/107 Pages) Renesas Technology Corp – Microcontroller

S128
2. Electrical Characteristics
160
140
Ta = 105^C , IC LK = 32M H z^*2
120
Ta = 25^C , IC LK = 32M H z^*1
100
80
60
40
20
Ta = 25^C , IC LK = 32M H z^{*1 *3}
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VCC (V)
Ta = 25^C , IC LK = 32M H z^*1
Ta = 25^C , IC LK = 32M H z^{*1 *3}
Ta = 105^C , IC LK = 32M H z^*2
Note 1. All peripheral operations except any BGO operation are operating normally. This is the average of the
actual measurements of the sample cores during product evaluation.
Note 2. All peripheral operations except any BGO operation are operating at maximum. This is the average of the
actual measurements for the upper-limit samples during product evaluation.
Note 3. MOCO and DAC are stopped.
Figure 2.21 Voltage dependency in subosc-speed mode (reference data)
Table 2.12 Operating and standby current (2)
Conditions: VCC = AVCC0 = 1.6 to 5.5 V
Parameter
Symbol Typ*³ Max
Unit
Test conditions
Supply
Software Standby T_a = 25°C
I_CC
0.5
2.0
μA
-
current*¹ mode*²
T_a = 55°C
0.8
7.0
T_a = 85°C
2.9
12.0
T_a = 105°C
6.3
42.0
Increment for RTC operation with
0.4
-
-
low-speed on-chip oscillator*⁴
Increment for RTC operation with
sub-clock oscillator*⁴
0.5
-
SOMCR.SODRV[1:0] are 11b
(Low power mode 3)
1.6
-
SOMCR.SODRV[1:0] are 00b
(normal mode)
Note 1. Supply current values do not include output charge/discharge current from all pins. The values apply when
internal pull-up MOS transistors are in the off state.
Note 2. The IWDT and LVD are not operating.
Note 3. VCC = 3.3 V.
Note 4. Includes the current of low-speed on-chip oscillator or sub-oscillation circuit.
R01DS0309EU0100 Rev.1.00
Mar 10, 2017
Page 44 of 107