HYB18L256160B Datasheet, PDF (7/58 Pages) Qimonda AG – DRAMs for Mobile Applications 256-Mbit Mobile-RAM

Data Sheet
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
2
Functional Description
The 256-Mbit Mobile-RAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally
configured as a quad-bank DRAM.
READ and WRITE accesses to the Mobile-RAM are burst oriented; accesses start at a selected location and continue for a
programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command,
followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select
the bank and row to be accessed (BA0, BA1 select the banks, A0 - A12 select the row). The address bits registered coincident
with the READ or WRITE command are used to select the starting column location for the burst access.
Prior to normal operation, the Mobile-RAM must be initialized. The following sections provide detailed information covering
device initialization, register definition, command description and device operation.
Rev. 1.73, 2006-09
7
01302004-CZ2R-J9SE