HYB18L256160B Datasheet, PDF (41/58 Pages) Qimonda AG – DRAMs for Mobile Applications 256-Mbit Mobile-RAM

Data Sheet
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
FIGURE 42
Auto Refresh
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2.4.9.2 SELF REFRESH
The SELF REFRESH command can be used to retain data in
the Mobile-RAM, even if the rest of the system is powered
down. When in the self refresh mode, the Mobile-RAM retains
data without external clocking. The SELF REFRESH
command is initiated like an AUTO REFRESH command
except CKE is LOW. Input signals except CKE are “Don’t
Care” during SELF REFRESH.
The procedure for exiting SELF REFRESH requires a stable
clock prior to CKE returning HIGH. Once CKE is HIGH, NOP
commands must be issued for t_RC because time is required
for a completion of any internal refresh in progress.
If during normal operation burst auto refresh or user
controlled refresh is used, add 8192 auto refresh cycles
just before self refresh entry and just after self refresh
exit.
FIGURE 43
SELF REFRESH Entry Command
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Rev. 1.73, 2006-09
41
01302004-CZ2R-J9SE