HYB18L256160B Datasheet, PDF (4/58 Pages) Qimonda AG – DRAMs for Mobile Applications 256-Mbit Mobile-RAM

Data Sheet
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
Type¹⁾
Description
Package
Commercial Temperature Range
HYB18L256160B[C/F]
133 MHz 4 Banks × 4 Mbit × 16 LP-SDRAM P-VFBGA-54-2
HYB18L256160B[C/F]
133 MHz 4 Banks × 4 Mbit × 16 LP-SDRAM P-VFBGA-54-2
TABLE 3
Ordering Information
Extended Temperature Range
HYB18L256160BC-7.5
133 MHz 4 Banks × 4 Mbit × 16 LP-SDRAM P-VFBGA-54-2
HYB18L256160BCL-7.5 133 MHz 4 Banks × 4 Mbit × 16 LP-SDRAM P-VFBGA-54-2
HYB18L256160BF-7.5
133 MHz 4 Banks × 4 Mbit × 16 LP-SDRAM P-VFBGA-54-2
HYB18L256160BFL-7.5 133 MHz 4 Banks × 4 Mbit × 16 LP-SDRAM
1) HY[B/E]: Designator for memory products (HYB: Standard temp. range; HYE: extended temp. range)
18L: 1.8 V Mobile-RAM
256: 256 MBit density
160: 16 bit interface width
B: die revision
C / F: lead-containing product (C) / green product (F)
L: low-power product
-7.5: speed grade(s): min. clock cycle time
1.2
Pin Configuration
FIGURE 1
Standard Ballout 256-Mbit Mobile-RAM






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Rev. 1.73, 2006-09
4
01302004-CZ2R-J9SE