HYB18L256160B Datasheet, PDF (52/58 Pages) Qimonda AG – DRAMs for Mobile Applications 256-Mbit Mobile-RAM

Data Sheet
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
Parameter & Test Conditions
TABLE 28
Self Refresh Currents
Max.
Symbol
Values for
Values for
Units Note¹⁾²⁾
Temperature
HY[B/E]256160B[C/F] HYE256160B[C/F]L
typ.
max.
typ.
max.
Self Refresh Current:
Self refresh mode,
full array activation
(PASR = 000)
85 °C
70 °C
45 °C
25 °C
I_DD6
510
600
430
450
µA
340
–
285
–
225
–
190
–
205
–
175
–
Self Refresh Current:
Self refresh mode,
half array activation
(PASR = 001)
85 °C
70 °C
45 °C
25 °C
400
470
305
320
285
–
220
–
200
–
155
–
180
–
140
–
Self Refresh Current:
Self refresh mode,
quarter array activation
(PASR = 010)
85 °C
70 °C
45 °C
25 °C
340
400
245
260
250
–
180
–
185
–
135
–
170
–
120
–
1) 0 °C ≤ T_C ≤ 70 °C (comm.); -25 °C ≤ T_C ≤ 85 °C (ext.); V_DD = V_DDQ = 1.65V to 1.95V
2) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual temperature with a much
finer resolution than supported by the 4 distinct temperature levels as defined by JEDEC for TCSR. At production test the sensor is
calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained from device characterization.
Rev. 1.73, 2006-09
52
01302004-CZ2R-J9SE