HYB18L256160B Datasheet, PDF (53/58 Pages) Qimonda AG – DRAMs for Mobile Applications 256-Mbit Mobile-RAM

Data Sheet
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
3.4
Pullup and Pulldown Characteristics
Voltag Half Drive Strength
e (V)
Pull-Down Current (mA) Pull-Up Current (mA)
Nominal
Low
0.00 0.0
0.40 15.1
0.65 20.3
0.85 22.0
1.00 22.6
1.40 23.5
1.50 23.6
1.65 23.8
1.80 23.9
1.95 24.0
Nominal
High
0.0
20.5
28.5
32.0
33.5
35.0
35.3
35.5
35.7
35.9
Nominal
Low
-19.7
-18.8
-18.2
-17.6
-16.7
-9.4
-6.6
-1.8
3.8
9.8
Nominal
High
-33.4
-32.0
-31.0
-29.9
-28.7
-20.4
-17.1
-11.4
-4.8
2.5
TABLE 29
Half Drive Strength and Full Drive Strength
Full Drive Strength
Pull-Down Current (mA) Pull-Up Current (mA)
Nominal
Low
0.0
30.2
40.5
43.9
45.2
46.9
47.2
47.5
47.7
48.0
Nominal
High
0.0
41.0
57.0
64.0
67.0
70.0
70.5
71.0
71.4
71.8
Nominal
Low
-39.3
-37.6
-36.4
-35.1
-33.3
-18.8
-13.2
-3.5
7.5
19.6
Nominal
High
-66.7
-63.9
-61.9
-59.8
-57.3
-40.7
-34.1
-22.7
-9.6
5.0
The above characteristics are specified under nominal process variation / condition
Temperature (Tj): Nominal = 50 °C, V_DDQ: Nominal = 1.80 V
Rev. 1.73, 2006-09
53
01302004-CZ2R-J9SE