HYB18L256160B Datasheet, PDF (48/58 Pages) Qimonda AG – DRAMs for Mobile Applications 256-Mbit Mobile-RAM

Data Sheet
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
3
Electrical Characteristics
3.1
Operating Conditions
Parameter
Symbol
TABLE 23
Absolute Maximum Ratings
Values
Unit
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Operation Case Temperature
Storage Temperature
Power Dissipation
Short Circuit Output Current
Commercial
Extended
min.
max.
V_DD
-0.3
V_DDQ
-0.3
V_IN
-0.3
V_OUT
-0.3
T_C
0
-25
T_STG
-55
P_D
–
I_OUT
–
2.7
V
2.7
V
V_DDQ + 0.3
V
V_DDQ + 0.3
V
+70
°C
+85
°C
+150
°C
0.7
W
50
mA
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage
to the integrated circuit.
Parameter
Symbol
Values
TABLE 24
Pin Capacitances
Unit
Note¹⁾²⁾
min.
max.
Input capacitance: CLK
C_I1
1.5
3.0
pF
Input capacitance: all other input
C_I2
1.5
3.0
pF
Input/Output capacitance: DQ
C_IO
3.0
5.0
pF
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 with V_DD, V_DDQ applied and all other pins (except the pin under test) floating. DQ’s
should be in high impedance state.
Rev. 1.73, 2006-09
48
01302004-CZ2R-J9SE