HYB18L256160B Datasheet, PDF (34/58 Pages) Qimonda AG – DRAMs for Mobile Applications 256-Mbit Mobile-RAM

Data Sheet
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
2.4.6.3 WRITE - DQM Operation
DQM may be used to mask write data: when asserted HIGH, input data will be masked and no write will be performed. The
generic timing parameters as listed in Table 13 also apply to this DQM operation. The write burst in progress is not affected
and will continue as programmed.
FIGURE 32
WRITE Burst - DQM Operation
&/ .
&RP PD QG 12 3 
$GGUH VV
'40 
'4 
:5 ,7(
%D$ 
&R OQ 
',Q 
12 3 
12 3 
12 3 
',Q  ',Q 
12 3 
%D$& ROQ %DQN $&R OX PQQ
'R Q W&D UH
',Q 'D WD,QWRFROX PQ Q
%XUVW/HQJWK LQ WK HFDVHVKR ZQ 
VXEVHTXH QWHOH PHQWVRI'D WD,QDUHSURYLG HGLQ WKHSURJUDP PH GRUGHUIR OOR ZLQ J
',QZLWKWK HILUVWHOHP HQW',Q EHLQ JPD VNHG
'4 0ZULWHODWH QF\LV FOR FNF\ FOH V
Rev. 1.73, 2006-09
34
01302004-CZ2R-J9SE