MT9M114_16 Datasheet, PDF (58/62 Pages) ON Semiconductor – High-Definition (HD) System-On- A-Chip (SOC) Digital Image Sensor

MT9M114: 1/6-Inch 720p High-Definition (HD) System-On-A-Chip (SOC) Dig-
ital Image Sensor
MIPI AC and DC Electrical Characteristics
Table 25: MIPI High-Speed Transmitter DC Specifications
Symbol
Parameter
Min
VCMTX
HS transmit static common-mode voltage
150
|  VCMTX(1,0)|
VCMTX mismatch when output is Differential-1 or
Differential-0
|VOD|
HS transmit differential voltage
140
|  VOD|
VOD mismatch when output is Differential-1 or Differential-0
VOHHS
HS output high voltage
ZOS
 ZOS
Single-ended output impedance
40
Single-ended output impedance mismatch
Nom
200
200
50
Max
Units
250
mV
5
mV
270
mV
10
mV
360
mV
62.5

10
%
Table 26: MIPI High-Speed Transmitter AC Specifications
Parameter
tR and tF
Description
Min
Nom
Max
Data bit rate
768
20%-80% rise time and fall time
0.3
150
Units
Mb/s
UI
ps
Table 27: MIPI Low-Power Transmitter DC Characteristics
Parameter
VOL
VOH
ZOLP
Description
Thevenin output high level
Thevenin output low level
Output impedance of LP transmitter
Min
Nom
1.1
1.2
-50
110
Max
Units
1.3
V
50
mV

Table 28: MIPI Low-Power Transmitter AC Characteristics
Symbol
TRLP/TFLP
TREOT
TLP-PULSE-TX
TLP-PER-TX
V/tSR
CLOAD
Parameter
Min
15%-85% rise time and fall time
30%-85% rise time and fall time
Pulse width of ^{First LP exclusive-OR clock pulse}
40
the LP
after Stop state or last pulse before
exclusive-OR ^{Stop state}
clock
All other pulses
20
Period of the LP exclusive-OR clock
90
Slew rate @ CLOAD = 70pF
Slew rate @ CLOAD = 0 to 70pF (Rising Edge Only)
30
Slew rate @ CLOAD = 0 to 70pF (Rising Edge Only) 30 – 0.075 * (VO,INST-700)
Load capacitance
0
Nom
Max
25
35
150
70
Units
ns
ns
ns
ns
ns
mV/ns
mV/ns
mV/ns
pF
MT9M114/D Rev. 11, 2/16 EN
58
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