PIC18F4550-IP Datasheet, PDF (383/438 Pages) Microchip Technology – 28/40/44-Pin, High-Performance, Enhanced Flash, USB Microcontrollers with nanoWatt Technology

PIC18F2455/2550/4455/4550
TABLE 28-1: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Internal Program Memory
Programming Specifications⁽¹⁾
D110 VIHH Voltage on MCLR/VPP/RE3 pin 9.00
— 13.25 V (Note 3)
D113 IDDP Supply Current during
Programming
—
—
10 mA
Data EEPROM Memory
D120 ED Byte Endurance
100K 1M
— E/W -40°C to +85°C
D121 VDRW VDD for Read/Write
VMIN
—
5.5
V Using EECON to read/write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
—
4
—
ms
D123 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
D124 TREF Number of Total Erase/Write
Cycles before Refresh⁽²⁾
1M 10M
— E/W -40°C to +85°C
Program Flash Memory
D130 EP Cell Endurance
10K 100K — E/W -40°C to +85°C
D131 VPR VDD for Read
D132 VIE VDD for Bulk Erase
VMIN
—
3.2⁽⁴⁾
—
5.5
V VMIN = Minimum operating
voltage
5.5
V Using ICSP™ port only
D132A VIW VDD for All Erase/Write
VMIN
—
Operations (except bulk erase)
5.5
V Using ICSP port or
self-erase/write
D133A TIW Self-Timed Write Cycle Time
—
2
—
ms
D134 TRETD Characteristic Retention
40
100
— Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: Refer to Section 7.7 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3: Required only if Single-Supply Programming is disabled.
4: Minimum voltage is 3.2V for PIC18LF devices in the family. Minimum voltage is 4.2V for PIC18F devices in
the family.
© 2009 Microchip Technology Inc.
DS39632E-page 381