HYB25L128160AC Datasheet, PDF (28/50 Pages) Infineon Technologies AG – 128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES

HYB/E 25L128160AC
128-MBit Mobile-RAM
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Burst Length = 4, CAS Latency = 2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t _CH
t _CL
t _CK2
CKE
t _CKS
t _CS
t _CH
Begin Auto
Precharge
Bank A
Begin Auto
Precharge
Bank B
t _CKH
CS
RAS
CAS
WE
BS
AP
Addr.
t_AH
RAx
RBx
t_AS
RAx
CAx
RBx
CBx
RAy
RAy
RAy
RAz
RBy
RAz
RBy
DQM
Hi-Z
DQ
t _RCD
t _WR
t _RC
t _RP
t _DS
t _DH
t _WR
Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 Bx2 Bx3
Ay0 Ay1 Ay2 Ay3
t _RP t RRD
Activate
Command
Bank A
Activate
Command
Bank B
Write with
Auto Precharge
Command
Bank A
Write with
Auto Precharge
Command
Bank B
Activate Write
Command Command
Bank A Bank A
Precharge Activate Activate
Command Command Command
Bank A Bank A Bank B
SPT03910_2
INFINEON Technologies
28
2003-02