HYB25L128160AC Datasheet, PDF (2/50 Pages) Infineon Technologies AG – 128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES

HYB/E 25L128160AC
128-MBit Mobile-RAM
Ordering Information
Type
Function Code Package
Commercial temperature range:
HYB 25L128160AC-7.5 PC133-333-522 BGA-BOC
HYB 25L128160AC-8 PC100-222-620 BGA-BOC
Extended temperature range:
HYE 25L128160AC-7.5 PC133-333-522 BGA-BOC
HYE 25L128160AC-8 PC100-222-620 BGA-BOC
Description
133 MHz 4B × 2M x16 LP-SDRAM
100 MHz 4B × 2M x16 LP-SDRAM
133 MHz 4B × 2M x16 LP-SDRAM
100 MHz 4B × 2M x16 LP-SDRAM
Pin Definitions and Functions
CLK
Clock Input
CKE
Clock Enable
DQ
LDQM, UDQM
Data Input/Output
Data Mask
CS
RAS
CAS
WE
A0 - A11,
A0 - A8
BA0, BA1
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Row Addresses
Column Addresses
Bank Select
9_DD
9_SS
9_DDQ
9_SSQ
N.C.
Power (+ 2.5V)
Ground
Power for DQ’s (+1.8 V)
Ground for DQ’s
Not connected
INFINEON Technologies
2
2003-02