HYB25L128160AC Datasheet, PDF (18/50 Pages) Infineon Technologies AG – 128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES

HYB/E 25L128160AC
128-MBit Mobile-RAM
AC Characteristics (cont’d)^{1, 2}
T_CASE = 0 to 70 °C (commercial) / -25 to 85^oC (Extended);
V_SS = 0 V; V_DD = 2.5 V nominal, V_DDQ = 1.8 V nominal, t_T = 1 ns
Parameter
Symb.
Unit Note
-7.5
-8
min. max. min. max.
Activate(a) to Activate(b)
Command Period
t_RRD
15
–
16 –
ns ⁵
CAS(a) to CAS(b) Command t_CCD 1
–
1
–
CLK –
Period
Refresh Cycle
Refresh Period
(4096 cycles)
Self Refresh Exit Time
t_REF
–
t_SREX
1
Read Cycle
Data Out Hold Time
t_OH
3
Data Out to Low Impedance t_LZ
1
Time
Data Out to High Impedance t_HZ
3
Time
DQM Data Out Disable
Latency
t_DQZ
–
64 –
–
1
–
3
–
0
7
3
2
–
64 ms –
–
CLK
–
ns
2, 5, 6
–
ns –
8
ns –
2
CLK –
Write Cycle
Write Recovery Time
t_WR
14 –
DQM Write Mask Latency t_DQW 0
–
14 –
0
–
ns
7
CLK –
INFINEON Technologies
18
2003-02