HYB25L128160AC Datasheet, PDF (25/50 Pages) Infineon Technologies AG – 128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES

HYB/E 25L128160AC
128-MBit Mobile-RAM
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(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command NOP Write A NOP NOP NOP NOP NOP NOP NOP
DQ’s
DIN A0 DIN A1 DIN A2 DIN A3 don’t care
The first data element and the Write
are registered on the same clock edge.
Extra data is ignored after
termination of a Burst.
SPT03790
INFINEON Technologies
25
2003-02