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HYB25L128160AC Datasheet, PDF (15/50 Pages) Infineon Technologies AG – 128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES
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HYB/E 25L128160AC
128-MBit Mobile-RAM
Capacitance :
TCASE = 0 to 70 °C (commercial) / -25 to 85oC (Extended);
VDD = 2.5 V nominal,VDDQ = 1.8 V nominal, f = 1 MHz
Parameter
Input Capacitance (CLK)
Input Capacitance
(A0 - A11, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
Input/Output Capacitance (DQ)
Symbol
CI1
CI2
Values
min. max.
-
3.5
-
3.8
Unit
pF
pF
CIO
-
6.0 pF
Operating Currents
TCASE = 0 to 70 °C (commercial) / -25 to 85oC (Extended);
VDD = 2.5 V nominal, VDDQ = 1.8 V nominal
(Recommended Operating Conditions unless otherwise noted)
Parameter & Test Condition
Symb. -7.5 -8
Unit Note
Operating current
tCK = tCK(MIN.)
one bank access
–
ICC1
Precharge standby current
in Power Down Mode
CS = VIH (MIN.), CKE ≤ VIL(MAX.)
Precharge standby current
in Non Power Down Mode
CS = VIH (MIN.), CKE ≥ VIH(MIN.)
No operating current
tCK = min., CS = VIH (MIN.),
active state (max. 4 banks)
tCK = min
ICC2P
tCK = min
ICC2N
CKE ≥ VIH(MIN.) ICC3N
CKE ≤ VIL(MAX.) ICC3P
Burst Operating Current
–
ICC4
tCK = min
Read command cycling
Auto Refresh Current
–
ICC5
tCK = min, trc = trcmin.
Auto Refresh command cycling
Deep Power Down Mode Current
ICC7
70 65
0.4 0.4
20 15
35 31
3
3
70 60
160 150
3
mA 3,4
mA 3
mA 3
mA 3
mA 3
mA 3,4
mA
µA
INFINEON Technologies
15
2003-02
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