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| GMS81C5108 Datasheet, PDF (15/102 Pages) Hynix Semiconductor – HYNIX SEMICONDUCTOR INC. 8-BIT SINGLE-CHIP MICROCONTROLLERS | |||
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GMS81C5108
7.3 DC Electrical Characteristics
(TA=-20~70°C, VDD=AVDD=2~4V, VSS=AVSS=0V)
Parameter
Symbol
Condition
VIH1 R0~R3
Input High Voltage
VIH2 RESET, XIN, INT0~INT2, EC0, SI, SCK
VIH3 SXIN
VIL1 R0~R3
Input Low Voltage
VIL2 RESET, XIN, INT0~INT2, EC0, SI, SCK
VIL3 SXIN
VOH1 R0~R3, IOH1=-0.7mA
Output High Voltage VOH2 XOUT, IOH2=-50µA
VOH3 SXOUT, IOH3=-5µA
VOL1 R0~R3, WDTOUT, IOL1=1mA
Output Low Voltage VOL2 XOUT, IOL2=50µA
VOL3 SXOUT, IOL3=5µA
Input High
Leakage Current
IIH R0~R3, VIN=VDD
Input Low
Leakage Current
IIL R0~R3, VIN=0V
Output High
Leakage Current
IOH REMOUT, VDD=3V, VOH= VDD-1.0V
Output Low
Leakage Current
IOL REMOUT, VDD=3V, VOL= 1.0V
Pull-up Resister
RP1 R0~R3, VDD=3V
RP2
RESET, VDD=3V
(GMS81C5108 Mask Option)
Feed Back Resister
RF1 Main OSC Feedback Resister VDD=3V
RF2 Sub OSC Feedback Resister VDD=3V
RC Oscillator
Frequency
FRC R=30kâ¦, VDD=3V
VREG Voltage
VREG VREG=0.2uF
IDD1
Main Active Mode
VDD=4V±10%, XIN=4MHz, SXIN=0
IDD2
Main Sleep Mode
VDD=4V±10%, XIN=4MHz, SXIN=0
Supply Current
IDD3
Stop Mode
V DD=4V ±10% , XIN=0, SXIN=0
IDD4
Sub Active mode1
VDD=3V±10%, XIN=0, SXIN=32.768kH z
IDD5
Sub Sleep mode
VDD=4V±10%, XIN=0, SXIN=32.768kH z
1. IDD4 is tested by only nop operation. The value of ( ) is tested at OTP.
Specifications
Min.
Typ.
Max.
0.7VDD
-
0.8VDD
-
0.8VREG
-
VDD
VDD
VREG
0
-
0.3 VDD
0
-
0.2VDD
0
-
0.2VREG
VDD-0.3
-
-
VDD-0.5
-
-
VREG-0.3
-
-
-
-
0.4
-
-
0.5
-
-
0.5
-
-
1
-
-
-1
-30
-
-5
0.5
-
3
50
100
200
30
60
120
0.5
-
1.5
5.
-
15
1
2
3
2.0
2.2
2.4
-
2.7
4.0
-
0.47
1.2
-
2.0
10
-
35(70) 80(150)
-
6.0
15
Unit
V
V
V
V
µA
mA
kâ¦
Mâ¦
MHz
V
mA
µA
12
JUNE 2001 Ver 1.0
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