MB84VD23381FJ Datasheet, PDF (50/54 Pages) Fujitsu Component Limited. – Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM

MB84VD23381FJ-80
s ERASE AND PROGRAMMING PERFORMANCE (Flash)
Parameter
Value
Unit
Min
Typ
Max
Remarks
Sector Erase Time
—
0.5
2
s
Excludes programming time
prior to erasure
Word Programming Time
—
6
100
µs
Excludes system-level
overhead
Chip Programming Time
—
25.2
95
s
Excludes system-level
overhead
Erase/Program Cycle
100,000
—
—
cycle
Note : Typical Erase conditions TA = +25°C, VCCf_1 & VCCf_2 = 2.9V
Typical Program conditions TA = +25°C, VCCf_1 & VCCf_2 = 2.9V
Data= Checker
s PIN CAPACITANCE
Parameter
Symbol
Input Capacitance
CIN
Output Capacitance
COUT
Control Pin Capacitance
CIN2
WP/ACC Pin Capacitance
CIN3
Note : Test conditions TA = +25 °C, f = 1.0 MHz
Test Setup
VIN = 0
VOUT = 0
VIN = 0
VIN = 0
Value
Unit
Typ
Max
11
14
pF
12
16
pF
14
16
pF
21.5
26
pF
s HANDLING OF PACKAGE
Please handle this package carefully since the sides of package create acute angles.
s CAUTION
• The high voltage (VID) cannot apply to address pins and control pins except RESET. Exception is when
autoselect and sector group protect function are used, then the high voltage (VID) can be applied to RESET.
• Without the high voltage (VID) , sector group protection can be achieved by using “Extended Sector Group
Protection” command.
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