MB84VD23381FJ Datasheet, PDF (37/54 Pages) Fujitsu Component Limited. – Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM

MB84VD23381FJ-80
• POWER DOWN PARAMETER (FCRAM)
Parameter
Symbol
CE2r Low Setup Time for Power Down Entry
tCSP
CE2r Low Hold Time after Power Down Entry
tC2LP
CE1r High Hold Time following CE2r High after
Power Down Exit
tCHH
CE1r High Setup Time following CE2r High after
Power Down Exit
tCHS
Value
Min
Max
10

100

350

10

Unit Note
ns
ns
µs
ns
• OTHER TIMING PARAMETER (FCRAM)
Parameter
Symbol
CE1r High to OE Invalid Time for Standby Entry
CE1r High to WE Invalid Time for Standby Entry
CE2r Low Hold Time after Power-up
CE2r HIgh Hold Time after Power-up
CE1r High Hold Time following CE2r High after
Power-up
Input Transition Time
tCHOX
tCHWX
tC2LH
tC2HL
tCHH
tT
Value
Min
Max
20

20

50

50

350

1
25
Unit Note
ns
ns
*1
µs
*2
µs
*3
µs
*2
ns
*4
*1: It may write some data into any address location if tCHWX is not satisfied.
*2: Must satisfy tCHH(Min) after tC2LH(Min).
*3: Requires Power Down mode entry and exit after tC2HL.
*4: The Input Transition Time (tT) at AC testing is 5 ns as shown in below. If actual tT is longer than 5 ns,
it may violate some timing parameters of AC specification.
• AC TEST CONDITIONS (FCRAM)
Parameter
Input High Level
Input Low Level
Input Timing Measurement Level
Input Transition Time
Symbol
VIH
VIL
VREF
tT
Condition
VCCr = 2.7 V to 3.1 V
VCCr = 2.7 V to 3.1 V
VCCr = 2.7 V to 3.1 V
Between VIL and VIH
Value
2.3
0.4
1.3
5
Unit
V
V
V
ns
Note
36