MB84VD23381FJ Datasheet, PDF (2/54 Pages) Fujitsu Component Limited. – Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-50304-3E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
CMOS
64 M ( × 16) FLASH MEMORY &
16 M ( × 16) Mobile FCRAM^TM
MB84VD23381FJ-80
s FEATURES
• Power Supply Voltage of 2.7 V to 3.1 V
• High Performance
70 ns maximum access time (Flash)
80 ns maximum access time (FCRAM)
• Operating Temperature
−30 °C to +85 °C
• Package 65-ball FBGA
s PRODUCT LINEUP
Power Supply Voltage ( V )
Max Address Access Time (ns)
Flash Memory
VCCf* = 2.7 V to 3.1 V
70
Max CE Access Time (ns)
70
Max OE Access Time (ns)
30
*: Both VCCf and VCCr must be the same level when either part is being accessed.
s PACKAGE
65-ball plastic FBGA
(Continued)
FCRAM
VCCr* = 2.7 V to 3.1 V
80
80
40
(BGA-65P-M01)