MB86R01 Datasheet, PDF (41/89 Pages) Fujitsu Component Limited. – MB86R01 DATA SHEET

MB86R01 DATA SHEET
8. Electrical Characteristics
8.1. Maximum Ratings
Table 8-1, Table 8-2, and Table 8-3 show the maximum ratings.
Table 8-1 Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply voltage
VDDI, PLLVDD -0.5 to 1.8 (*1)
VDDE
-0.5 to 4.0 (*2)
V
DDRVDE
-0.5 to 2.5 (*3)
Input voltage
V_I
-0.5 to VDDI + 0.5 (< 1.8V)
-0.5 to VDDE + 0.5 (< 4.0V)
V
-0.5 to DDRVDE + 0.5 (< 2.5V)
Output voltage
V_O
-0.5 to VDDI + 0.5 (< 1.8V)
-0.5 to VDDE + 0.5 (< 4.0V)
V
-0.5 to DDRVDE + 0.5 (< 2.5V)
Storage temperature
T_ST
-55 to 125
°C
Junction temperature T_J
-40 to 125
°C
Power consumption
P_D
1.5
W
Supply current
I_D
1.2V: 690.1 (*4)
1.8V: 508 (*4)
mA
3.3V: 125.3 (*4)
*1: Power supply for internal part or PLL
*2: Power supply for I/O part
*3: Power supply for SSTL_18 I/O part
*4: Current specification necessary for each voltage power supply
Note:
• Applying stress exceeding the maximum ratings (voltage, current, temperature, etc.) may cause
damage to semiconductor devices. Never exceed the ratings above.
• Since thermal destruction of elements might occur, do not connect IC output or I/O pin directly, or
connect them to V_DD or V_SS directly, except the pin designed output timing to prevent such incident.
• Provide ESD protection, such as grounding when handling the product; otherwise externally-charged
electric charge flows into the IC and discharges, which may cause circuit destruction.
• Applying voltage higher than V_DD or lower than V_SS to I/O pins of CMOS IC, or applying voltage
higher than the ratings between V_DD and V_SS may cause latch up. The latch up increases supply
current, resulting in thermal destruction of elements. When handling the product, never exceed the
maximum ratings.
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PROPRIETARY AND CONFIDENTIAL