PXR40 Datasheet, PDF (55/100 Pages) Freescale Semiconductor, Inc – PXR40 Microcontroller

Electrical characteristics
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[phone]
MIL-SPEC and EIA/JESD (JEDEC) specifications are available from Global Engineering Documents at 800-854-7179 or
303-397-7956.
JEDEC specifications are available on the WEB at http://www.jedec.org.
• C.E. Triplett and B. Joiner, “An Experimental Characterization of a 272 PBGA Within an Automotive Engine
Controller Module,” Proceedings of SemiTherm, San Diego, 1998, pp. 47-54.
• G. Kromann, S. Shidore, and S. Addison, “Thermal Modeling of a PBGA for Air-Cooled Applications,” Electronic
Packaging and Production, pp. 53-58, March 1998.
• B. Joiner and V. Adams, “Measurement and Simulation of Junction to Board Thermal Resistance and Its Application
in Thermal Modeling,” Proceedings of SemiTherm, San Diego, 1999, pp. 212-220.
5.3 EMI (Electromagnetic Interference) characteristics
To find application notes that provide guidance on designing your system to minimize interference from radiated emissions, go
to www.freescale.com and perform a keyword search for “radiated emissions.” The following tables list the values of the
device's radiated emissions operating behaviors.
Table 5. EMC radiated emissions operating behaviors: 416 BGA
Symbol
Description
Conditions
f_OSC
f_SYS
Frequency
band (MHz)
Level
(max.)
Unit Notes
V_{RE_TEM}
Radiated emissions,
electric field and
magnetic field
V_DD = 1.2 V
V_DDE = 3.3 V
V_DDEH = 5 V
T_A = 25 °C
416 BGA
EBI off
CLK on
FM off
40 MHz crystal
264 MHz
(f_{EBI_CAL} = 66
MHz)
0.15–50
50–150
150–500
500–1000
IEC and SAE level
26 dBV ¹
30
34
30
I²
—
1, 3
V_{RE_TEM}
Radiated emissions,
electric field and
magnetic field
V_DD = 1.2 V
V_DDE = 3.3 V
V_DDEH = 5 V
T_A = 25 °C
416 BGA
EBI off
CLK off
FM on⁴
40 MHz crystal
264 MHz
(f_{EBI_CAL} = 66
MHz)
0.15–50
50–150
150–500
500–1000
IEC and SAE level
24 dBV ¹
25
25
21
K⁵
—
1,3
1 _{Determined according to IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband TEM Cell}
Method, and SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated Circuits—TEM/Wideband TEM
(GTEM) Cell Method.
2 _{I = 36 dBV}
3 _{Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband}
TEM Cell Method, and Appendix D of SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated
Circuits—TEM/Wideband TEM (GTEM) Cell Method.
4 _{“FM on” = FM depth of ±2%}
5 _{K = 30 dBV}
PXR40 Microcontroller Data Sheet, Rev. 1
Freescale Semiconductor
55