EN27LN1G08 Datasheet, PDF (9/41 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory

Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V_SS
Temperature Under Bias
Storage Temperature
Short Circuit Current
Symbol
V_CC
V_IN
V_I/O
T_BIAS
T_STG
I_OS
EN27LN1G08
Rating
Unit
-0.6 to +4.6
V
-0.6 to VCC + 0.3 (< 4.6)
-40 to +125
℃
-65 to +150
℃
5
mA
Note:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -
2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to
VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional
operation should be restricted to the conditions as detailed in the operational sections of this data
sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, T_A = 0 to 70°C or – 40°C to 85°C)
Parameter
Symbol
Min.
Supply Voltage
Supply Voltage
V_CC
2.7
V_SS
0
Typ.
3.3
0
Max.
Unit
3.6
V
0
V
DC AND OPERATION CHARACTERISTICS
(Recommended operating conditions otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Unit
Operating
Sequential Read
I_CC1
t_RC=25ns, CE# =V_IL, I_OUT=0mA
-
Current
Program
I_CC2
-
-
Erase
I_CC3
-
-
15
30
15
30
mA
15
30
Stand-by Current (TTL)
I_SB1
CE# =V_IH, WP# =0V/V_CC
-
-
1
mA
Stand-by Current (CMOS)
I_SB2
CE# = V_CC -0.2, WP# =0V/ V_CC
-
10
50
uA
Input Leakage Current
I_LI
V_IN=0 to V_CC (max)
-
-
±10
uA
Output Leakage Current
I_LO
V_OUT=0 to V_CC (max)
-
-
±10
uA
Input High Voltage
V_IH
-
0.8 x V_CC
-
V_CC +0.3 V
Input Low Voltage, All inputs
V_IL
-
-0.3
-
0.2 x V_CC V
Output High Voltage Level
V_OH
I_OH=-400uA
2.4
-
-
V
Output Low Voltage Level
V_OL
I_OL=2.1mA
-
-
0.4
V
Output Low Current (R/B#)
I_OL (R /B#) V_OL=0.4V
8
10
-
mA
Note:
1. V_IL can undershoot to -0.4V and V_IH can overshoot to V_CC+0.4V for durations of 20ns or less.
2. Typical value are measured at V_CC =3.3V, T_A = 25℃. And not 100% tested.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. C, Issue Date: 2013/10/03