EN27LN1G08 Datasheet, PDF (36/41 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory

EN27LN1G08
READY/BUSY#
The device has an R/B# output that provides a hardware method of indicating the completion of a page
program, erase and random read completion. The R/B# pin is normally high but transitions to low after
program or erase command is written to the command register or random read is started after address
loading. It returns to high when the internal controller has finished the operation. The pin is an open-
drain driver thereby allowing two or more R/B# outputs to be Or-tied.
R_P vs t_RHOH vs C_L
R_P value guidance
where I_L is the sum of the input currents of all devices tied to the R/ B# pin.
R_P (max) is determined by maximum permissible limit of tr
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. C, Issue Date: 2013/10/03