EN27LN1G08 Datasheet, PDF(37/41 Page) Eon Silicon Solution Inc. – 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory

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EN27LN1G08 Datasheet, PDF (37/41 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory

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EN27LN1G08

Data Protection & Power-up sequence

The device is designed to offer protection from any involuntary program/erase during power-transitions.

An internal voltage detector disables all functions whenever VCC is below about 2V. WP# pin provides

hardware protection and is recommended to be kept at VIL during power-up and power-down. A

recovery time of minimum 100us is required before internal circuit gets ready for any command

sequences as below. The two step command sequence for program/erase provides additional software

protection.

AC Waveforms for Power Transition

Note: During the initialization, the device consumes a maximum current of ICC1.

WP# AC Timing guide

Enable WP# during erase and program busy is prohibited. The erase and program operations are

enabled and disable as follows.

Program enable mode:

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. C, Issue Date: 2013/10/03

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