EN27LN1G08 Datasheet, PDF (18/41 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory

EN27LN1G08
System Interface Using CE# don’t-care
For an easier system interface, CE# may be inactive during the data-loading or sequential data-reading
as shown below. The internal 2,112 bytes page registers are utilized as separate buffers for this
operation and the system design gets more flexible. In addition, for voice or audio applications which
use slow cycle time on the order of u-seconds, de-activating CE# during the data-loading and reading
would provide significant savings in power consumption. Below are the figures of Program Operation
and Read Operation with CE# don’t-care respectively.
Address Information
I/O
I/Ox
I/O0~7
DATA
Data In / Out
~ 2112 bytes
Col. Add1
A0 ~ A7
ADDRESS
Col. Add2 Row Add1
A8 ~ A11
A12 ~ A19
Row Add2
A20 ~ A27
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. C, Issue Date: 2013/10/03