EN27LN1G08 Datasheet, PDF (25/41 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory

Read ID Operation
EN27LN1G08
ID Definition Table
ID Access command = 90h
Maker Code Device Code
92h
F1h
3^rd Cycle
80h
4^th Cycle
95h
5^th Cycle
40h
1^st Byte
2^nd Byte
3^rd Byte
4^th Byte
5^th Byte
Description
Maker Code
Device Code
Internal Chip Number, Cell Type, Number of Simultaneously
Programmed Pages, Etc.
Page Size, Block Size, Redundant Area Size, Organization,
Serial Access Minimum
Plane Number, Plane Size
3rd ID Data
Description I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0
1
0
0
Internal Chip Number ²
4
0
1
1
0
8
1
1
2 Level Cell
0
0
Cell Type
4 Level Cell
8 Level Cell
0
1
1
0
16 Level Cell
1
1
Number of
Simultaneously
Programmed Page
1
2
4
8
0
0
0
1
1
0
1
1
Interleave Program Not Support
0
Between multiple
chips
Support
1
Cache Program
Not Support
0
Support
1
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. C, Issue Date: 2013/10/03