EN27LN1G08 Datasheet, PDF (1/41 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory

EN27LN1G08
1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory
EN27LN1G08
Features
• Voltage Supply: 2.7V ~ 3.6V
• Organization
- Memory Cell Array :
(128M + 4M) x 8bit for 1Gb
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64) bytes
- Block Erase : (128K + 4K) bytes
• Page Read Operation
- Page Size : (2K + 64) bytes
- Random Read : 25µs (Max.)
- Serial Access : 25ns (Min.)
• Memory Cell: 1bit/Memory Cell
• Fast Write Cycle Time
- Page Program Time : 200µs (Typ.)
- Block Erase Time : 1.5ms (Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power
Transitions
• Reliable CMOS Floating-Gate Technology
• Endurance:
- 100K Program/Erase Cycles (with 1 bit/528 bytes
ECC)
- Data Retention: 10 Years
• Command Driven Operation
• Cache Program Operation for High Performance
Program
• Copy-Back Operation
• OTP Operation
• Unique ID for Copyright Protection
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. C, Issue Date: 2013/10/03