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EN27LN1G08 Datasheet, PDF (23/41 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory
Page Program Operation with Random Data Input
EN27LN1G08
Note: tADL is the time from WE# rising edge of final address cycle to the WE# rising edge of first data
cycle.
Copy-Back Program Operation with Random Data Input
Note: tADL is the time from WE# rising edge of final address cycle to the WE# rising edge of first data cycle.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. C, Issue Date: 2013/10/03