EN27LN1G08 Datasheet, PDF(13/41 Page) Eon Silicon Solution Inc. – 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory

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EN27LN1G08 Datasheet, PDF (13/41 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory

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EN27LN1G08

Identifying Initial Invalid Block(s)

All device locations are erased (FFh) except locations where the initial invalid block(s) information is

written prior to shipping. The initial invalid block(s) status is defined by the 1st byte in the spare area.

Eon makes sure that either the 1st or 2nd page of every initial invalid block has non-FFh data at the 1st

byte column address in the spare area. Since the initial invalid block information is also erasable in most

cases, it is impossible to recover the information once it has been erased. Therefore, the system must

be able to recognize the initial invalid block(s) based on the initial invalid block information and create

the initial invalid block table via the following suggested flow chart. Any intentional erasure of the initial

invalid block information is prohibited.

Error in write or read operation

Within its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the

qualification report for the block failure rate. The following possible failure modes should be considered

to implement a highly reliable system. In the case of status read failure after erase or program, block

replacement should be done. Because program status fail during a page program does not affect the

data of the other pages in the same block, block replacement can be executed with a page-sized buffer

by finding an erased empty block and reprogramming the current target data and copying the rest of the

replaced block. In case of Read, ECC must be employed. To improve the efficiency of memory space, it

is recommended that the read failure due to single bit error should be reclaimed by ECC without any

block replacement. The block failure rate in the qualification report does not include those reclaimed

blocks.

Write

Read

Failure

Erase Failure

Program Failure

Single Bit Failure

Detection and Countermeasure sequence

Status Read after Erase â Block Replacement

Status Read after Program â Block Replacement

Verify ECC â ECC Correction

ECC:

1. Error Correcting Code --> Hamming Code etc.

2. Example) 1bit correction & 2bits detection

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. C, Issue Date: 2013/10/03

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